Silicon Carbide based power electronics use electrical energy significantly more efficient than current silicon-based semiconductors: gains from 6% to 30% are expected depending on application. TRANSFORM will provide European downstream market players with a reliable source of SiC components and systems based on an entirely European value chain - from substrates to energy converters. Its technical excellence strengthens the global competitive position of Europe. TRANSFORM improves current SiC technologies beyond state-of-the-art to serve large emerging markets for electric power conversion in renewable energies, mobility and industry. Substrate manufacturing process innovation will establish a new global standard: smart-cut technology allows high scalability, superior performance and reliability. Substrate and equipment manufacturers plus technology providers cooperate to increase maturity of the new processes from lab demonstration to pilot lines. Device manufacturers develop and tailor processes and device design based on the new substrate process, including adaptation of planarMOS and development of new TrenchMOS technology. Performance and reliability of devices is expected to increase greatly. For exploiting the potential of SiC devices, integration technologies and system design are improved concurrently, including new copper metallization processes for higher reliability and performance, module integration for high reliability and reduction of cost, and dedicated integrated driver technologies to optimize switching modes and parallel operation in high current applications. The project will demonstrate energy savings in applications (DC/AC, DC/DC, AC/DC) in the renewable energy domain, industry and automotive. TRANSFORM contributes to European societal goals and the green economy through significantly increasing energy efficiency by providing a competitive, ready-to-industrialized technology, strengthening Europes technological sovereignty in a critical field.

GENESIS, backed by Horizon Europe, aims to make semiconductor manufacturing sustainable, aligning with the European Green Deal, by minimizing environmental impact with eco-friendly innovations. [Objectives] GENESIS aims to replace harmful materials with safer options, improve waste management, and enhance the use and recyclability of scarce materials. [Innovations] GENESIS introduces innovations in three key areas: • Innovative materials: PFAS-free polymer and eco-friendly gas alternatives complying with EU regulations. • Waste & emissions monitoring: Cutting-edge sensors detect hazardous substances for efficient aqueous and gas waste elimination, reducing environmental and health risks. • Scarce material management: New integration technologies optimize material usage and initiate recycling of scarce materials like Gallium, Niobium, and silicon carbide. [Methodology] GENESIS employs four technical work packages to research sustainable material substitution, emission reduction, and resource management. This modular approach promotes scalability and integration with existing processes, fostering a circular economy in the semiconductor sector. Supervised by management work packages, it quantifies environmental efficiency and engages in dissemination to promote European technological achievements [Outcomes] The project targets a 50% cut in hazardous materials, 30% decrease in emissions and waste, and improved scarce material recyclability, boosting EU semiconductor sustainability and global competitiveness. [Impact] GENESIS supports EU's tech sovereignty and resilience through accurate monitoring and sustainable practices. It positions Europe as a leader in sustainable semiconductor tech, setting new standards for impact-oriented communication and dissemination.

FastLane targets a full, highly competitive and sustainable European value chain for Silicon Carbide (SiC) based power electronics. The goal is to provide a competitive technology excellence from engineered SiC substrates to novel devices, smart power modules and converters to broadened automotive and industrial applications. The next generation of SiC materials will be developed by improved quality of the crystalline starting material, material re-use and acceleration of substrate EU-based manufacturing. Based on the new materials the next generation SiC MOSFET power devices will be developed overcoming current limitations regarding efficiency, performance, robustness and sustainability and will integrate also new on-chip sensing technology. Power modules based on the devices will be further improved by several innovations, e.g. advanced sintering which will lead to improved power module reliability and therefore better sustainability. On component level, highly efficient and reliable inverters for automotive and industrial applications will be developed, including a variety of innovations in detail. In all steps, an improvement of SiC material characterization methodologies will increase the quality and the output of EU based semiconductors. Overall, performance and reliability are expected to increase greatly in all steps. These developments will lead to an overall reduction of cost and, by reduction of the footprint (lifetime increase, CO2 decrease, water consumption decrease), to a greener economy. With the envisioned goals, FastLane will decrease the environmental footprint all along the product lifecycle and contribute to the European Green Deal and ensure a sustainable European sovereignty in power electronics. Cost benefits for the end user will be achieved by the reuse of the automotive economy of scale. With these steps, FastLane contributes to the European societal goals and a greener economy.