This project aims at designing network of semiconductor nanolasers on silicon-on-insulator waveguide circuitry for neuromorphic computing applications. To design networks with many nano-lasers, the consortium will first play a special attention on designing energy efficient self-pulsating. These lasers will subsequently interconnected via the underlying silicon circuitry for neuromorphic computing applications. In this scheme, integrated Mach-Zehnder modulators will be used in order to allow to reconfigure the networks for different applications of neuromorphic computing.

The TranStab project (3-year duration) associates two academic laboratories (LPL/CNRS UMR 7538/USPN and Institut Foton/CNRS UMR 6082/ENSSAT/Univ. Rennes) and one industrial company (Thales TRT). The project involves the design and realization of compact devices for transferring the stability of a 1.5 µm optical frequency reference (REFIMEVE or a stand-alone reference developed in the ANR ASTRID BRIOCHE project) to wavelengths of interest ranging from the mid-infrared to the visible. Various solutions will be explored: ring cavities for 10-15 level transfer around 1.5 µm with quasi-continuous C+L band coverage, ring cavities with 1.5 µm /1 µm multiplexer coupler for extended transfer towards 1 µm, unbalanced Mach-Zehnder interferometer for transfer up to 980 nm, the operating limit of single-mode fibers. Using non-linear optics techniques, the stability of the 1.5 µm reference will be transposed to sources emitting at the wavelengths of use, in both the IR and visible ranges. Their frequency stability will be metrologically characterized. These sources will enable a variety of high-sensitivity experiments for the realization of sensors and for applications in the field of quantum technologies, representative of the community's needs. The approach adopted in the TranStab project will thus be demonstrated on a variety of applications requiring stability at various wavelengths: high-sensitivity sensors based on Brillouin lasers at 1.5 µm, optical gyroscopes at 633 nm, spectral analysis exploiting the optical coherence properties of Tm3+ ions at cryogenic temperature at 793 nm, addressing of Pr3+ ions at 606 nm for the realization of quantum memories.

RF switches are essential for enabling wireless communication in many applications. Currently, RF switch technology is dominated by semiconductors (PIN diodes or FET) or electromechanical systems (MEMS). Emerging technologies are needed to find new functionalities while reducing the size, weight, power consumption, and cost (SWaP-C) of components. Two-dimensional materials (2DMs), particularly Transition-Metal Dichalcogenides (TMDs) like PtSe2, WS2, and WSe2, have the potential to address this challenge. Their exceptional properties, including bandgap and electronic mobility, make them strong candidates for the next generation of high-performance RF switches. They offer better efficiency, lower power consumption, and higher operating frequency bands (ranging from GHz to THz). The initial results from the consortium have validated the concept, but there are several challenges that need to be addressed. The first challenge concerns the deposition of single layers of TMD and heterostructures over a large area (up to a 2-inch wafer), including depth characterization of the 2DMs. The second challenge will focus on developing electromagnetic models to link the properties of TMDs with the modelling of RF switches. The final challenge is to effectively design RF switches based on 2DMs and implement them into RF systems as phase shifters for 6G multibeam antennas and radar applications. The scientific goal of the 2DHEXPLOR project is to provide the necessary tools to the scientific community to develop a new generation of RF components that can address industrial problems and increase TRL for these types of materials. The consortium comprises Thales Research and Technology, IETR, and UMPhy, which bring diverse and complementary expertise to the project.

Spin-waves are propagating collective spin excitations of magnetic materials. In a classical approach, they are considered as potential information carriers in future logic and RF devices. Recently, spin-waves were proposed to mediate the long-distance entanglement of NV spin-qubits, a key bottleneck of this field. Furthermore, classical spin-waves can also benefit NV based quantum sensing by amplifying the microwave excitation and enlarging their instantaneous detection bandwidth. In parallel, magnons, the bosonic analog of spin-waves, and can host quantum behaviors such as magnonic Bose-Einstein condensate (m-BEC). To date, m-BEC remain debated and observed in only one system. We anticipate that NV quantum sensing techniques will enable a direct access to m-BEC in ferromagnetic and antiferromagnetic insulators, which could host spin-superfluids. The TACTIQ project has two objectives. On the fundamental side, we will explore magnon BEC in selected materials using NV sensing, optical spectroscopy and high field EPRVNA spectroscopy. On the applied side, we will on the short term employ NV magnetometry to develop and benchmark magnon based devices and on a longer term realize building blocks for the magnon and NV based hybrid quantum devices.

2DonGaN proposes a new solution to efficiently dope 2D semiconductors (SC) grown on III-V heterostructures (e.g. AlGaN/GaN). Depending on the stack, these heterostructures induce spontaneous and piezoelectric polarizations that generate fixed positive or negative charges at their surface. These charges then generate n or p doping in the 2D SC. This project is based on (i) previous studies showing high crystalline quality growth of 2D on GaN and (ii) on III-V Lab knowledge to create 2D electron gas in HEMT structures. As demonstrators, we will fabricate n-type and p-type transistors and a high frequency field-effect transistor. The buffer and 2D SC will be grown by MOVPE and MBE at III-V lab and TRT respectively. The 2D materials will be transition metal dichalcogenides (MoSe2 or WSe2). The technological process will be ensured at IEMN with passivation layers and contact optimization. Electrical characterizations will be performed by IEMN, III-V Lab and ENS to assess materials and devices. High synergy on the design/fabrication of 2D/III-V devices and carrier transport mechanisms will lead to a deep understanding of 2D doping by III-V heterostructures (ENS).