photonixFAB brings together key European photonics and semiconductor players, to establish a strong and sovereign European supply chain for silicon photonics. The consortium leverages the volume capacity of X-FAB, the European More-than-Moore foundry, and addresses the work program with six key objectives: (1) Transferring IMEC's world-renowned silicon-on-insulator (SOI) platform to X-FAB, to achieve industrial manufacturing capacity. The SOI platform addresses a variety of high-speed and sensing applications. (2) Extending the industrial manufacturing capability of LIGENTEC's silicon nitride (SiN) technology at X-FAB, to become the industry standard for SiN photonics. The low-loss, and broad transparency of SiN are perfect for sensing, quantum computing, amongst others. (3) Increasing maturity of heterogeneous integration with SMART Photonics' Indium Phosphide (InP) active components such as lasers, modulators and detectors. These components are integrated on top of the SOI and SiN platforms by transfer-printing. This is an X-FAB associated technology, forming a key innovation differentiator for photonixFAB. The leading European RTOs, IMEC and CEA, are supporting photonixFAB with various technologies, developed in Horizon Europe activities, such as prototype transfer-printing, LiNbO3 modulators and Ge detectors on SiN. (4) Strengthening the European ecosystem with design automation (Luceda), innovative packaging solutions (PHIX), and increased testing capabilities. (5) Demonstrating the viability of the new supply chain and technologies through six application-oriented demonstrators in a wide array of markets. (6) Setting up pilot line and multi-project wafer access to serve innovation by start-ups, SMEs and large entities, and opening photonixFAB for direct feedback on competitiveness and capabilities. Thereby the relationships between the supply chain partners and prospective end-users, as well as between the photonics and the ECS worlds will be strengthened.

X-TREME 6G proposal relies on a unique industry led consortium to provide a foundational open microelectronics platform in Europe with the objective to create and design key disruptive next generation chiplets and chipsets for 6G use cases. The idea is to break-up the full potential of best-in-class Silicon BiCMOS, InP and heterogeneous 3D integration for high capacity radio access technologies such as wireless back-hauling at sub-TeraHertz frequencies, Joint Communication And Sensing, Non Terrestrial Networks and Network as a Sensor. New classes of chipsets will unleash the full potential of 6G and enable the emergence of new applications through specific developments for the underpinning novel microelectronic technologies. X-TREME 6G valorizes also resource efficient 6G algorithms and an ML/AI software toolbox for computationally efficient silicon-ready baseband extensions. Part of the SNS “Microelectronic Lighthouse” visionary initiative, the proposal’s ambition is to establish and maintain a sustainable open platform for the duration of the SNS program and beyond, to support 6G verticals. By nurturing the links with the emerging Chips JU pilot lines, the platform acts as a first fabric to accelerate joint initiatives between SNS and Chips JUs. In a nutshell, X-TREME 6G will provide tangible contributions towards an experimentation EU framework for 6G, demonstrating the full benefit of the newly developed chipsets and chiplets for a set of emerging 6G high potential use cases (wireless back-hauling, JCAS, NTN, NaS); while being open to dynamically support the emerging 6G ecosystem (SMEs, Industries, Service Providers, Government etc.) and evaluate additional 6G challenges and expectations. By strengthening and extending the 6G functionality and microelectronics supply chain, X-TREME 6G contributes towards a network-centric democratized and open 6G ecosystem able to release the current hyperscaler’s market embrace, while empowers European Industry at large.

This proposal describes the third core project of the Graphene Flagship. It forms the fourth phase of the FET flagship and is characterized by a continued transition towards higher technology readiness levels, without jeopardizing our strong commitment to fundamental research. Compared to the second core project, this phase includes a substantial increase in the market-motivated technological spearhead projects, which account for about 30% of the overall budget. The broader fundamental and applied research themes are pursued by 15 work packages and supported by four work packages on innovation, industrialization, dissemination and management. The consortium that is involved in this project includes over 150 academic and industrial partners in over 20 European countries.

Graph-X aims at the development of a novel hardware platform based on graphene photonic integrated circuits for ultra-high speed and scalable sub-THz D- (110-170 GHz) and H-band (170-240 GHz) wireless links. The proposed technology will be the basic building block for high-speed radio back haul links, multi beam forming antennas for massive MIMO, short distance high resolution RADAR sensing. GraPh-X targets the distribution and detection of multi Gbit/s radio signals over sub-THz tunable carrier frequencies. The main outcome of GraPh-X will be a monolithic electronic and photonic chip (EPIC) that will constitute the basic building block of a completely new class of photonic/electronic antenna arrays for the next generation sub-THz communication and RADAR systems. The proposed approach will allow to overcome the technical bottlenecks of current sub-THz technology, such as increasing detrimental effect of phase noise at higher carrier frequencies, and carrier frequency stability. To reach the goal, the wafer scale graphene photonic technology is needed and must go beyond the state of the art. A new technique (HMG-Stack technology) will be developed to allow multi-stacking of graphene layers maintaining the same properties of single layer graphene. The key component of GraPh-X is a novel optoelectronic efficient frequency mixer able to mix two optical wavelengths and a high data rate electrical signal. The photonic chip will be realized using a SiN photonic platform that will integrate HMG-Stack as active material. The monolithic integration of the graphene photonic mixer with SiGe BiCMOS electronics for mmWave amplification will enable high output power and reduced footprint (<500x500µm2), matching the requirements of a single element of mmWave antenna array system.

The 2D Experimental Pilot Line (2D-EPL) project will establish a European ecosystem for prototype production of Graphene and Related Materials (GRM) based electronics, photonics and sensors. The project will cover the whole value chain including tool manufacturers, chemical and material providers and pilot lines to offer prototyping services to companies, research centers and academics. The 2D-EPL targets to the adoption of GRM integration by commercial semiconductor foundries and integrated device manufacturers through technology transfer and licensing. The project is built on two pillars. In Pillar 1, the 2D-EPL will offer prototyping services for 150 and 200 mm wafers, based on the current state of the art graphene device manufacturing and integration techniques. This will ensure external users and customers are served by the 2D-EPL early in the project and guarantees the inclusion of their input in the development of the final processes by providing the specifications on required device layouts, materials and device performances. In Pillar 2, the consortium will develop a fully automated process flow on 200 and 300 mm wafers, including the growth and vacuum transfer of single crystalline graphene and TMDCs. The knowledge gained in Pillar 2 will be transferred to Pillar 1 to continuously improve the baseline process provided by the 2D-EPL. To ensure sustainability of the 2D-EPL service after the project duration, integration with EUROPRACTICE consortium will be prepared. It provides for the European actors a platform to develop smart integrated systems, from advanced prototype design to small volume production. In addition, for the efficiency of the industrial exploitation, an Industrial Advisory Board consisting mainly of leading European semiconductor manufacturers and foundries will closely track and advise the progress of the 2D-EPL. This approach will enable European players to take the lead in this emerging field of technology.