The main objective of this proposal is to develop reliable GaN-based power devices and systems for high and medium power electronics targeting industrial and automotive applications and bringing the GaN power devices another step towards the wide usability in the energy saving environment to further tap the full potential which this new material brings along. This proposal addresses two subjects, one of which is medium power (till 10kW) GaN-on-Si based lateral HEMT structures (Normally OFF devices), with special focus on high reliability, which is still a major blocking item to allow wide-spread market adoption. Hence, the impact of the GaN material quality, in combination with the device layout in view of long-term reliability will be addressed. The project aims an in-depth reliability study and qualification strategy development whereby the study of the impact of dislocations and other structural disturbances inside the materials on the long term device reliability will be specifically addressed. In addition, this proposal aims to demonstrate new device concepts with increased robustness and reliability, which will be realized, evaluated and tested thoroughly. This will demonstrate how it is possible to overcome the known limitations of the GaN on Silicon technology, like e.g. the vertical leakage, trapping phenomena and/or breakdown of lateral HEMTs and the p-GaN gate related reliability issues. The current proposal also contains the development of novel device architecture (dual channel, substrate removal, e-mode), as well as the exploration of new material systems (Aluminum Nitride (Al-based) devices) which can also largely contribute to overcome drawbacks of the GaN on Si technology. The applicability of the novel GaN-on-Si concepts in form of an industrial inverter will be demonstrated finally, with the development of an innovative low inductance packaging system for power devices, making full benefits of the fast switching capability of GaN-based power devices.

YESvGaN targets a new low-cost wide band gap (WBG) power transistor technology for enabling high-efficiency power electronic systems in the field of electromobility, industrial drives, renewable energies and data centers. In many applications requiring power transistors with high voltage and current rating (600…1200V, ~100A), silicon IGBT technology is nowadays used due to cost considerations accepting its lower efficiency compared to WBG solutions. The main objective of YESvGaN is to demonstrate innovative vertical gallium nitride (GaN) power transistors fabricated on a low-cost substrate such as silicon. This so-called vertical membrane architecture combines the superior performance of GaN as WBG power transistor material with the advantages of a vertical architecture regarding current and voltage robustness at a price competitive to silicon IGBTs. To this end, the entire value chain from substrate, epitaxy, process technology, interconnection technology to application in relevant power electronic systems is addressed. YESvGaN clusters the relevant competences along the value chain in a consortium of large companies, SMEs and institutes from seven European countries.

Power electronics is the key technology to control the flow of electrical energy between source and load for a wide variety of applications from the GWs in energy transmission lines, the MWs in datacenters that power the internet to the mWs in mobile phones. Wide band gap semiconductors such as GaN use their capability to operate at higher voltages, temperatures, and switching frequencies with greater efficiencies. The GaNonCMOS project aims to bring GaN power electronic materials, devices and systems to the next level of maturity by providing the most densely integrated materials to date. This development will drive a new generation of densely integrated power electronics and pave the way toward low cost, highly reliable systems for energy intensive applications. This will be realized by integrating GaN power switches with CMOS drivers densely together using different integration schemes from the package level up to the chip level including wafer bonding between GaN on Si(111) and CMOS on Si (100) wafers. This requires the optimization of the GaN materials stack and device layout to enable fabrication of normally-off devices for such low temperature integration processes (max 400oC). In addition, new soft magnetic core materials reaching switching frequencies up to 200 Mhz with ultralow power losses will be developed. This will be assembled with new materials and methods for miniaturised packages to allow GaN devices, modules and systems to operate under maximum speed and energy efficiency. A special focus is on the long term reliability improvements over the full value chain of materials, devices, modules and systems. This is enabled by the choice of consortium partners that cover the entire value chain from universities, research centers, SME’s, large industries and vendors that incorporate the developed technology into practical systems such as datacenters, automotive, aviation and e-mobility bikes

The key objective of PowerBase “Enhanced substrates and GaN pilot lines enabling compact power applications” is to ensure the availability of Electronic Components and Systems (ECS) for key markets and for addressing societal challenges, aiming at keeping Europe at the forefront of the technology development, bridging the gap between research and exploitation, creating economic and employment growth in the European Union. The project PowerBase aims to contribute to the industrial ambition of value creation in Europe and fully supports this vision by addressing key topics of ECSEL multi annual strategic plan 2014. By positioning PowerBase as innovation action a clear focus on exploitation of the expected result is primary goal. To expand the limits in current power semiconductor technologies the project focuses on setting up a qualified wide band gap GaN technology Pilot line, on expanding the limits of today’s silicon based substrate materials for power semiconductors, improving manufacturing efficiency by innovative automation, setting up of a GaN compatible chip embedding pilot line and demonstrating innovation potential in leading compact power application domains. PowerBase is a project proposal with a vertical supply chain involved with contributions from partners in 7 European countries. This spans expertise from raw material research, process innovation, pilot line, assembly innovation and pilot line up to various application domains representing enhanced smart systems. The supporting partners consist of market leaders in their domain, having excellent technological background, which are fully committed to achieve the very challenging project goals. The project PowerBase aims to have significant impact on mart regions. High tech jobs in the area of semiconductor technologies and micro/nano electronics in general are expressed core competences of the regions Austria: Carinthia, Styria, Germany: Sachsen, Bavaria and many other countries/ regions involved.

Millimetre-wave (mm-wave) frequencies are currently being exploited for a wide range of applications such as radars, wireless communication, and imaging. There is a strong industry pull to substantially reduce the cost of mm-wave systems for future key markets such as 5G wireless communications and autonomous vehicles (automotive radar sensors). These systems will increasingly rely on active antenna arrays and electronic beam-steering. A fundamental challenge is to bring into production high performance mm-wave active antenna systems, at a viable price-point and low energy consumption. The objective of SERENA is to scale the functional performance of mm-wave beam-steering systems in terms of improved output power and efficiency (2x), reduced form factor (4x), increased data rate (up to 100x), and increased affordability (10x). To reach these goals, SERENA will provide an optimized hybrid analog/digital mm-wave beam-steering system architecture. A proof-of-concept prototype will be built using state-of-the-art GaN-on-Silicon technology, SiGe/CMOS integrated circuits and a novel heterogeneous 3D integration approach to reach low-cost with beyond state-of-the-art performance (high output power and efficiency). The SERENA project will contribute to doubling the economic value of semiconductor component production in Europe within the next 10 years by a two-pronged approach. First, the SERENA consortium spans the whole electronics manufacturing and supply chain (from wafers to system providers) and world class academic institutions. Hence, SERENA considerably strengthens the design ecosystem for key semiconductors (GaN-on-Si, SiGe/CMOS) and advanced 3D packaging. Second, the SERENA integration platform will enable “mass customization” of advanced mm-wave systems, where the front-end circuitry can be adapted for specific market needs.