The vision of 1D-NEON proposal is to develop fibre-based smart materials along with an integrated technology platform for the manufacturing in Europe of new products with multi-sectorial applications in consumer electronics, energy, healthcare and fitness, smart buildings, sensors and e-skin for soft robotics. The overall objective of 1D-NEON is to build a modular platform for manufacturing fibre-based industrial products in multiple market sectors. Nanomaterials will be assembled into five basic fibre components along with manufacturing processes for integration into smart products, to impact three pilot applications. Our design and manufacturing approach will address both technical performance and cost-effectiveness of these multi-sectorial applications, targeting sustainable development of new high-value, high performance devices and systems that could be integrated safely into everyday objects for an improved quality of life. With that perspective, 1D-NEON fully addresses the challenges of the H2020 work programme topic NMP 22 – 2015: Fibre-based materials for non-clothing applications.

EXTMOS’ main objective is to create a materials model and the related user friendly code that will focus on charge transport in doped organic semiconductors. Its aims are (i) to reduce the time to market of (a) multilayer organic light emitting devices, OLEDs, with predictable efficiencies and long lifetimes (b) organic thin film transistors and circuits with fast operation. (ii) to reduce production costs of organic devices by enabling a fully solution processed technology. Development costs and times will be lowered by identifying dopants that provide good device performance, reducing the number of dopant molecules that need to be synthesized and the materials required for trial devices. (iii) to reduce design costs at circuit level through an integrated model linking molecular design to circuit operation. Screening imposes the following requirements from the model 1. An improved understanding of dopant/host interactions at the molecular level. Doping efficiencies need to be increased to give better conducting materials. For OLEDs, dopants should not absorb visible light that lowers output nor ultraviolet light that can cause degradation. 2. An ability to interpret experimental measurements used to identify the best dopants. 3. The possibility of designing dopants that are cheap and (photo)chemically robust and whose synthesis results in fewer unwanted impurities, and that are less prone to clustering. The EXTMOS model is at the discrete mesoscopic level with embedded microscopic electronic structure and molecular packing calculations. Modules at the continuum and circuit levels are an integral part of the model. It will be validated by measurements on single and multiple layer devices and circuits and exploited by 2 industrial end users and 2 software vendors. US input is provided by an advisory council of 3 groups whose expertise complements that of the partners.

Silicon carbide presents a high breakdown field (2-4 MV/cm) and a high energy band gap (2.3–3.2 eV), largely higher than for silicon. Within this frame, the cubic polytype of SiC (3C-SiC) is the only one that can be grown on a host substrate with the huge opportunity to grow only the silicon carbide thickness required for the targeted application. The possible growth on silicon substrate has remained for long period a real advantage in terms of scalability regarding the reduced diameter of hexagonal SiC wafer commercially available. Even the relatively narrow band-gap of 3C-SiC (2.3eV), which is often regarded as detrimental in comparison with other polytypes, can in fact be an advantage. The lowering of the conduction band minimum brings about a reduced density of states at the SiO2/3C-SiC interface and MOSFET on 3C-SiC has demonstrated the highest channel mobility of above 300 cm2/(Vxs) ever achieved on SiC crystals, prompting a remarkable reduction in the power consumption of these power switching devices. The electrical activity of extended defects in 3C SiC is a major concern for electronic device functioning. To achieve viable commercial yields the mechanisms of defects must be understood and methods for their reduction developed.. In this project new approaches for the reduction of defects will be used, working on new compliance substrates that can help to reduce the stress and the defect density at the same time. This growth process will be driven by numerical simulations of the growth and simulations of the stress reduction. The structure of the final devices will be simulated using the appropriated numerical tools where new numerical model will be introduced to take into account the properties of the new material. Thanks to these simulations tools and the new material with low defect density, several devices that can work at high power and with low power consumption will be realized inside the project.