Solid state quantum emitters such as semiconductor quantum dots (QDs) have been successfully used as building blocks for photon-based quantum information processes. The majority of break-throughs, such as demonstration of indistinguishable single photon sources and optical generation, manipulation and read-out of spin qu-bits were initially demonstrated using epitaxially grown InAs/GaAs QDs. Recently, however, an alternative QD system : virtually strain-free GaAs/AlGaAs QDs fabricated by infilling of in-situ droplet etched nano-holes has been generating increasing interest with recent developements demonstrating that these dots can achieve close to radiative-limited linewidths and indistinguishable photon emission. Increasing the aluminum content in the AlGaAs barrier layers opens up the possibility of creating a novel indirect exciton, where the hole is confined in the QD, and the electron is confined in the X-valley of the AlGaAs barrier. This new QD system where the location of an electron can be controlled by a voltage to be either in one of the barriers or in the dot itself is an alternative to a QD molecule. We aim to to demonstrate an all-optical quantum teleportation procedure of an electron, initially prepared in the dot, towards one of the barriers by using a bi-chromatic optical excitation sequence implementing an adiabatic passage between two spatially separated states. Highly concentrated aluminum barriers also considerably slow down the decay of the QD nuclear spin magnetization. Using this new QD system which has low residual stress, we intend to manipulate the nuclear magnetization by exciting the dot with a surface acoustic wave (SAW) in order to switch on and store a precessional mode of the nuclear spins in the dot. The SAW transducer being deposited directly on the sample, this experiment integrates directly on the sample the driving radio-frequency excitation for nuclear spin manipulation to give an « on-chip NMR platform » for semiconductors.