Moving from exfoliation to the reproducible direct growth of transition metal dichalcogenides, MX2 [M=W or Mo, X=S, Se or Te], on conventional or van der Waals substrates is the current challenge in the moving field of two-dimensional (2D) materials research. S tarting from WSe2 and WTe2, we first focus improving the Chemical Vapour Deposition (CVD) of 2D mono-layers, before investigating the growth of WSeTe alloys of controlled composition. Being stuck between WSe2, direct band gap semiconductor with hexagonal crystal structure (1H), and WTe2, semi-metal with a monoclinic lattice (1T'), the 2D WSeTe monolayer presents naturally a crystal phase transitions (1H-1T'). At the critical composition, the phase transition occurs reversibly, at minimal energy cost, leading to potential device applications. In this work, we propose to use an external electrical field to drive and control the phase transition between a conductive (semi-metal) and insulating (semi-conductor) state of a 2D WSeTe monolayer, mimicking the geometry of standard field effect transistor devices. The fabrication of this "Mott transition-like" field effect transistor will permit to investigate the dynamics of the phase transition and test its practical implementation.