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PHOTOMOC

METAL OXO-CLUSTERS AS VERSATILE BUILDING BLOCKS FOR LOW-TEMPERATURE PREPARATION OF SEMI-CONDUCTIVE AND CONDUCTIVE DIRECT WRITE MICRO-NANO PATTERNING
Funder: French National Research Agency (ANR)Project code: ANR-14-CE26-0039
Funder Contribution: 265,200 EUR

PHOTOMOC

Description

We propose in this project to develop a negative tone photoresist based on a versatile metal-oxo clusters (MOC) plateform for direct-write micro and nanopatterns by DUV lithography at room temperature. By mixing MOC with different compositions, the electrical properties of the final materials will be tuned from insulating to semi-conducting with adjustable parameters. The MOC will thus be the building block of the material allowing : - photopatterning - low temperature assisted by DUV irradiation curing leading to metal oxyde - semi-conductor properties for final properties We aim to address both fundamental and applied objectives through this project. At fundamental point of view, deeper understanding are needed to 1/ fully describe the synthesized metal-oxo clusters, 2/ understand the photoinduced material preparation, including the use of light for crosslinking the material and mineralize it at low temperature, 3/ build relationships between final properties (especially the electrical properties) and multiscale structure, 4/ extend the range of electrical properties, from insulating to semi-conducting materials, with adjustable parameters. Simple devices will be produced for validating the electrical properties of the material and demonstrate the possibility to fabricate operating devices by a simple low-temperature process. The key issue, reliability, of MOC-based transistor will also be investigated when tuning the MOC materials. Using this new material, direct-write oxide transistor on flexible substrate will be enable and will constitute one of main targets of the project. This project will be conducted by 2 partners having a strong interaction since more than 5 years. Dr Olivier Soppera at IS2M (CNRS UMR 7361), in France, and Prof Hsiao-Wen Zan at NCTU, in Taiwan had developed complementary research activities in this field. The PHOTOMOC project will be a unique opportunity to shear this expertise and boost up this research. Significant advances in fundamental research with applications in microelectronics, sensors or displays are expected from this work.

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