The global energy consumption for information processing is at an all-time high and still keeps on increasing every year. It is therefore crucial to develop electronic devices that consume less energy. In this project, we will fabricate and scrutinize a novel type of transistor. This transistor will be based on the topological material germanene, a two-dimensional form of germanium. This revolutionary type of transistor operates by using an electric field to turn ON and OFF topologically protected edge channels in germanene, in which current flows without energy loss.