Transport properties of Mn-doped Ru2Si3
Copyright policy )Transport properties of Mn-doped Ru2Si3
Transport properties of Mn-doped ruthenium silicide Ru2Si3 were studied both experimentally and theoretically. The precipitation-free Ru2Si3 single crystals were grown by the zone melting technique with radiation heating. The temperature dependence of the electrical resistivity and Hall coefficients of the crystals were measured. The electrical resistivity of 1% Mn-doped Ru2Si3 was lower than that of undoped crystals. The carrier concentration in the doped samples is about 1018 cm-3 at room temperature. Mn-doped Ru2Si3 has a twice higher carrier mobility compared to the undoped one. Theoretical calculation of the charge carrier mobility is based on the effective masses which are estimated from the ab initio electronic band structure and classical scattering mechanisms.
- Leibniz Association Germany
- Belarusian State University Belarus
Microsoft Academic Graph classification: Electron mobility Materials science Ab initio Analytical chemistry chemistry.chemical_element chemistry.chemical_compound Electrical resistivity and conductivity Silicide Electronic band structure Zone melting Doping Ruthenium chemistry
Electrical and Electronic Engineering, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials
Microsoft Academic Graph classification: Electron mobility Materials science Ab initio Analytical chemistry chemistry.chemical_element chemistry.chemical_compound Electrical resistivity and conductivity Silicide Electronic band structure Zone melting Doping Ruthenium chemistry
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