New microelectronic applications such as wireless communications or radar detections require increasingly high data rates or resolutions. That implies to work at very high frequencies, in the millimetre waves domain. More specifically, in the frequency range 140-220 GHz (G-band), microelectronic circuits are emerging but suffer from a lack of complete characterization tools. There is a strong need for in wafer integrated measurement set-ups. Hence the BISCIG project aims to integrate, for the first time, a measurement system that would directly and completely measure incoming and outgoing powers, at all ports, and very close to the Device Under Test (DUT). The set-up is proposed in G-band. This project includes two versions. The first version (called "load-pull") concerns large signal power measurements to characterize power amplifiers in millimeter and sub-millimeter-wave bands. External current measurement devices, such as commercial impedance tuners, cannot do that efficiently. Because of their intrinsic losses in G-band, they cannot cover all the impedances of the complex plane to be presented at the output of the power amplifier. The second version will enable to characterize 4-ports DUT with small signal analysis (called “S-parameters”) and to perform differential measurements. Indeed, such instrument does not exist beyond 110 GHz. The BISCIG project therefore meets an industrial need for characterization of devices for new applications and expanding in G-band (high-speed communication systems, radar detection, imagers). Our solution consists in addressing the integrated measurement set-up with a well-known signal covering the 35-55 GHz spectrum. This microwave signal is then amplified and frequency quadrupled in order to address the G-band in the same technology as the DUT. Finally, we measure DC output signals as images of the detected powers, to characterize the behaviour of the DUT. The technology, provided by STMicroelectronics, is the SiGe BiCMOS 55 nm which is very powerful in the millimeter-wave band. The Back End of Line is very well suited to realize passive devices (thick metals in the upper layers). The Front End of Line is completely suitable as well for active devices (fT/fmax = 300/400 GHz). The academic partners will work closely, hand in hand, with the manufacturer STMicroelectronics providing the technology. IMEP-LAHC will design the measurement systems while IEMN will handle the characterization of the component blocks as well as the various sub- systems.