TRAMP addresses the scientific and technical details of the origin and potential use of the giant piezoresponse observed in silicon nano-objects. After a 10 year debate about the veracity of the giant piezoresistance (PZR) in silicon nanowires, the TRAMP partners (all of whom have been visible participants in this debate) have preliminary evidence for a giant piezocapacitive (PZC) effect. Experiments suggest a central role for stress-induced changes to the charge state of intrinsic defects at the silicon/oxide interface (specifically the Pb0 defect). The capacitive (rather than resistive) nature of the phenomenon is a surprise and the TRAMP partners have the opportunity to be ‘first-in-field’, both in terms of the fundamental science, but also for device applications of this novel phenomenon that occurs in scalable, top-down fabricated silicon nano-objects. In the initial phase of the project, the TRAMP partners will fabricate ohmically contacted, top-down silicon nanomembranes to be tested in a taylor-made apparatus that allows for the frequency and voltage dependence of the piezoresponse to be measured under uniaxial tensile and compressive stresses up to ˜150 MPa. The dependence of the piezoresponse on doping, temperature and nano-object geometry will be explored and then used to improve the design of a second process batch. This method of rapid prototyping has been used previously by the TRAMP partners, and will yield a map of the relative importance of the PZR and PZC responses as a function of these parameters. This is not only essential from the point of view of developing a microscopic understanding of the phenomenon, but also in terms of optimizing conditions for its use as a stress or motion transduction mechanism. Proper characterization of the piezoresponse will employ two techniques specifically adapted to nano-objects: micro-Raman spectroscopy for the measurement of the local stress in nano-objects, with the option to use TERS for the smallest objects, and Laplace current transient spectroscopy for the identification of the electromechanically active defects thought to be responsible for the giant, anomalous piezoresponse. This latter method is not yet widely used but is adapted to defect spectroscopy on any electrically connected nano-objects whose capacitance is too small to permit the use of more traditional capacitive spectroscopies. Once the optimal conditions (i.e. for maximum, stable PZC) have been determined, the TRAMP partners will undertake a technical study of two potential applications: the electrical detection of process induced microstrains in the active layer of ultra-thin commercial silicon-on-insulator wafers for quality control purposes; and as a means to detect motion in a nano-mechanical resonator where standard optical or capacitive methods lose sensitivity. The second application requires the fabrication of in-plane nanoresonators in which the TRAMP partners are expert. In the final task of the project the results of these two technical studies will be used as the basis for discussions with potential industrial partners. Impacts of a successful TRAMP project will therefore include high visible scientific and technical results, the first steps in the characterization of devices exploiting the PZC that are based on a scalable, top-down silicon technology, the patenting of intellectual property, and exploratory talks with partners from the semiconductor manufacturing industry aimed at licensing or collaborative opportunities.